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An electrical resistivity study of lattice defects introduced in copper by 1.25 Mev electron irradiation at 80°K /

机译：通过1.25 mev电子辐照在80°K /铜中引入晶格缺陷的电阻率研究

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Meechan, C. J.; Brinkman, J. A.; author; U.S. Atomic Energy Commission.; Technical Information Center; North American Aviation.; Atomics International Division.;
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年度 1956
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An electrical resistivity study of lattice defects introduced in copper by 1.25 Mev electron irradiation at 80°K /

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